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| SI4562DY Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.025 @ VGS = 4.5 V 0.035 @ VGS = 2.5 V ID (A) "7.1 "6.0 "6.2 "5.0 P-Channel -20 0.033 @ VGS = -4.5 V 0.050 @ VGS = -2.5 V D1 D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 "12 "7.1 "5.7 "40 1.7 2.0 1.3 P-Channel -20 "12 "6.2 "4.9 "40 -1.7 2.0 Unit V A W 1.3 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70717 S-54940--Rev. A, 29-Sep-97 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P-Channel 62.5 Unit _C/W 2-1 SI4562DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = -20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = -20 V, VGS = 0 V, TJ = 55_C On-State Drain Currentb ID(on) VDS w 5 V, VGS = 4.5 V VDS v -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 7.1 A DiS OS Ri Drain-Source On-State Resistanceb VGS = -4.5 V, ID = -6.2 A rDS(on) VGS = 2.5 V, ID = 6.0 A VGS = -2.5 V, ID = -5.0 A Forward Transconductanceb gfs VDS = 10 V, ID = 7.1 A VDS = -10 V, ID = -6.2 A IS = 1.7 A, VGS = 0 V IS = -1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.025 0.040 27 S 20 1.2 V -1.2 0.035 0.050 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 A -20 0.019 0.027 0.025 0.033 W 0.6 V -0.6 "100 "100 1 -1 5 -5 mA A nA Symbol Test Condition Min Typa Max Unit Gate-Body Leakage IGSS Diode Forward Voltageb VSD Dynamica N-Ch Total Gate Charge Qg N-Channel N Ch l VDS = 10 V VGS = 4.5 V, ID = 7.1 A V, 45V 71 P-Channel VDS = -10 V, VGS = -4.5 V, ID = -6.2 A P-Ch N-Ch P-Ch N-Ch Gate-Drain Charge Qgd P-Ch N-Ch Turn-On Delay Time td(on) N-Channel N Ch l VDD = 10 V, RL =10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W A 45V P-Channel VDD = -10 V, RL = 10 W ID ^ -1 A, VGEN = -4.5 V RG = 6 W 1A 4 5 V, P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time tf IF = 1.7 A, di/dt = 100 A/ms IF = -1.7 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 25 22 6.5 nC C 7 4 3.5 40 27 40 32 90 95 40 45 40 40 60 50 60 50 150 ns 150 60 70 80 80 50 35 Gate-Source Charge Qgs Rise Time tr Turn-Off Delay Time td(off) Source-Drain Reverse Recovery Time trr Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70717 S-54940--Rev. A, 29-Sep-97 SI4562DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 5 thru 3 V 2.5 V 30 I D - Drain Current (A) I D - Drain Current (A) 30 40 N-CHANNEL Transfer Characteristics 20 2V 10 20 TC = 125_C 10 25_C 1, 1.5 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0 0.5 1.0 1.5 -55_C 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 4000 Capacitance r DS(on)- On-Resistance ( W ) 0.08 C - Capacitance (pF) 3200 Ciss 2400 0.06 0.04 VGS = 2.5 V 0.02 VGS = 4.5 V 1600 Coss 800 Crss 0 0 10 20 ID - Drain Current (A) 30 40 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 5 VDS = 10 V ID = 7.1 A V GS - Gate-to-Source Voltage (V) Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 7.1 A 3 r DS(on)- On-Resistance ( W ) (Normalized) 0 5 10 15 20 25 4 1.4 1.2 2 1.0 1 0.8 0 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70717 S-54940--Rev. A, 29-Sep-97 www.vishay.com S FaxBack 408-970-5600 2-3 SI4562DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 40 0.10 ID = 7.1 A TJ = 150_C 10 TJ = 25_C r DS(on)- On-Resistance ( W ) 0.08 N-CHANNEL On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 0.06 0.04 0.02 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 30 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA 24 -0.2 Power (W) -0.0 18 12 -0.4 6 -0.6 -50 -25 0 25 50 75 100 125 150 0 0.01 0.10 1.00 Time (sec) 10.00 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70717 S-54940--Rev. A, 29-Sep-97 SI4562DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 5, 4.5, 4, 3.5 V 32 I D - Drain Current (A) 3V I D - Drain Current (A) 32 25_C 24 125_C 40 TC = -55_C P-CHANNEL Transfer Characteristics 24 2.5 V 16 2V 8 1.5 V 0 0 1 2 3 4 5 16 8 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 4500 Capacitance r DS(on)- On-Resistance ( W ) 0.08 C - Capacitance (pF) 3600 Ciss 0.06 VGS = 2.5 V 2700 0.04 VGS = 4.5 V 1800 0.02 900 Coss Crss 0 0 8 16 24 32 40 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 5 VDS = 10 V ID = 6.2 A Gate Charge 1.6 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 3 r DS(on)- On-Resistance ( W ) (Normalized) 4 1.4 VGS = 4.5 V ID = 6.2 A 1.2 2 1.0 1 0.8 0 0 5 10 15 20 25 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70717 S-54940--Rev. A, 29-Sep-97 www.vishay.com S FaxBack 408-970-5600 2-5 SI4562DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 40 0.10 P-CHANNEL On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on)- On-Resistance ( W ) 0.08 I S - Source Current (A) 0.06 ID = 6.2 A TJ = 25_C 0.04 0.02 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 30 Single Pulse Power 24 V GS(th) Variance (V) 0.3 ID = 250 mA Power (W) 18 12 0.0 6 -0.3 -50 -25 0 25 50 75 100 125 150 0 0.01 0.10 1.00 Time (sec) 10.00 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70717 S-54940--Rev. A, 29-Sep-97 |
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